김홍석 최인훈 은광용 백영준 2024-01-21T17:14:55Z 2024-01-21T17:14:55Z 2022-01-10 1998-03 1229-7801 https://pubs.kist.re.kr/handle/201004/143216 한국세라믹학회 Formation of SiC layer on single crystal Si using hot-filament reactor Article 2 한국세라믹학회지 = Journal of the Korean Ceramic Society, v.4, no.1, pp.25 - 27 한국세라믹학회지 = Journal of the Korean Ceramic Society 4 1 25 27 SiC