Lee, JC Byun, JY Park, SB Lee, HI 2024-01-21T17:15:09Z 2024-01-21T17:15:09Z 2021-09-03 1998-03 1359-6454 https://pubs.kist.re.kr/handle/201004/143220 Interfacial phenomena in the SiCp/Al composite were investigated using SEM, DSC, AES, and XRD. The value of these combined techniques in elucidating detailed interfacial phenomena was demonstrated. Theoretical calculations of equilibrium Si contents required to prevent the formation of Al4C3 in the SiC/Al composite were performed by taking the variations in Al and Si activities as well as those of other compounds into account for the calculations. Based on calculations, there exists a transition temperature at which a sudden increase in equilibrium Si contents required to prevent Al4C3 formation occurs. Experimental measurements of equilibrium Si contents were also performed to confirm the theoretical results. (C) 1998 Acta Metallurgica Inc. English PERGAMON-ELSEVIER SCIENCE LTD Prediction of Si contents to suppress the formation of Al4C3 in the SiCp/Al composite Article 10.1016/S1359-6454(97)00265-6 1 ACTA MATERIALIA, v.46, no.5, pp.1771 - 1780 ACTA MATERIALIA 46 5 1771 1780 N scie scopus 000072632800029 2-s2.0-0032472972 Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Materials Science Metallurgy & Metallurgical Engineering Article INTERFACIAL REACTIONS SILICON-CARBIDE ALUMINUM AL BEHAVIOR ALLOYS interface