Kim, YT Kwon, CS Kim, DJ Park, JW Lee, CW 2024-01-21T17:15:13Z 2024-01-21T17:15:13Z 2021-09-03 1998-03 0734-2101 https://pubs.kist.re.kr/handle/201004/143221 We implanted 6 X 10(16)-3 X 10(17) nitrogen ions/cm(2) into 100 nn thick tungsten thin films with acceleration energies of 20-60 KeV. As a result, the thermal stability of N+-implanted W thin films is greatly improved from 700 to 900 degrees C because polycrystalline W thin films change into nanostructured films after N+ implantation. The W thin film implanted at 40 KeV and 3 X 10(17) ions/cm(2) effectively prevents Cu diffusion after an annealing at 800 degrees C for 30 min. When the acceleration energy and dosage are higher or lower than this optimum condition, thermal stability of the N+-implanted W film is degraded due to surface damage of Si substrate and partially nanostructured W thin film. (C) 1998 American Vacuum Society. English AMER INST PHYSICS METALLIZATION CU Effects of nitrogen ion implantation on the thermal stability of tungsten thin films Article 10.1116/1.581046 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.16, no.2, pp.477 - 481 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 16 2 477 481 scie scopus 000072587200015 2-s2.0-11644300895 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article METALLIZATION CU Diffusion barrier ion implantation thermal stability amorphous