Lee, HN Lim, MH Kim, YT Kalkur, TS Choh, SH 2024-01-21T17:15:30Z 2024-01-21T17:15:30Z 2021-09-03 1998-03 0021-4922 https://pubs.kist.re.kr/handle/201004/143226 For the fabrication of metal/ferroelectric/insulator/semiconductor field effect transistors (MEFISFETs), SrBi2Ta2O9 (SBT) film was formed onto Y2O3 layer using the metal organic deposition (MOD) method. Memory windows of MEFISFET were in the range of 0.96-1.38 V when the gate voltage varied from 5 to 7 V. Current-voltage characteristic and transconductance curve of the MEFISFET show the effective gate modulation and the stable memory effect induced by the ferroelectric properties. English JAPAN SOC APPLIED PHYSICS PZT THIN-FILMS Characteristics of metal/ferroelectric/insulator/semiconductor field effect transistors using a Pt/SrBi2Ta2O9/Y2O3/Si structure Article 10.1143/JJAP.37.1107 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.37, no.3B, pp.1107 - 1109 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 37 3B 1107 1109 scie scopus 000073664900017 2-s2.0-0001404592 Physics, Applied Physics Article; Proceedings Paper PZT THIN-FILMS ferroelectric insulator thin film SrBi2Ta2O9 Y2O3 MEFIS FET