Yuan, S Kim, Y Tan, HH Jagadish, C Burke, PT Dao, LV Gal, M Chan, MCY Li, EH Zou, J Cai, DQ Cockayne, DJH Cohen, RM 2024-01-21T17:16:22Z 2024-01-21T17:16:22Z 2021-09-01 1998-02-01 0021-8979 https://pubs.kist.re.kr/handle/201004/143241 Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the effects of intermixing on the quantum well shape. Residual water in the oxide was found to increase the intermixing, though it was not the prime cause for intermixing. Injection of defects such as group III vacancies or interstitials was considered to be a driving force for the intermixing. Different current densities used in the experimental range to create anodic oxides had little effect on the intermixing. (C) 1998 American Institute of Physics. [S0021-8979(98)04103-6]. English AMER INST PHYSICS IMPURITY-FREE INTERDIFFUSION WAVE-GUIDE OPTICAL-PROPERTIES MQW LASERS GAAS DIFFUSION FABRICATION OXIDATION STEP Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells Article 10.1063/1.366830 1 JOURNAL OF APPLIED PHYSICS, v.83, no.3, pp.1305 - 1311 JOURNAL OF APPLIED PHYSICS 83 3 1305 1311 scie scopus 000071726400022 2-s2.0-0001316362 Physics, Applied Physics Article IMPURITY-FREE INTERDIFFUSION WAVE-GUIDE OPTICAL-PROPERTIES MQW LASERS GAAS DIFFUSION FABRICATION OXIDATION STEP MOCVD intermixing quantum wells quantum wires oxidation