Kim, JH Yoon, YS Polla, DL 2024-01-21T17:16:29Z 2024-01-21T17:16:29Z 2022-01-11 1998-02 0374-4884 https://pubs.kist.re.kr/handle/201004/143243 Pb(Zr0.53Ti0.47)O-3 thin films have been deposited on the Pt/Ti/SiO2/Si-wafer substrate and Pt/Ti/TiO2/polysilicon/Si3N4/Si-wafer substrate with and without post-thermal annealing at 950 degrees C for 30 minutes. Hysteresis curve and piezoelectric constant (d(33)) of the PZT thin films are reported. X-ray diffraction analysis of Pb(Zr0.53Ti0.47)O-3 thin films and cross section view of the Pb(Zr0.53Ti0.47)O-3 deposited on the substrates were observed. Piezoelectric constant (d(33)) of Pb(Zr0.53Ti0.47)O-3 thin film deposited on the Pt/Ti/TiO2/polysilicon/Si3N4/Si-wafer substrate was measured to be 158 pm/V determined by using single beam laser interferometer and coercive field and remanent polarization were 39.5 mu C/cm(2) and 65.2 kV/cm, respectively. The graphs of the piezoelectric constant results and hysteresis curves is reported. English KOREAN PHYSICAL SOC Annealing process of Pt/Ti/TiO2/polysilicon/Si3N4/Si-wafer using as a substrate of Pb(Zr0.53Ti0.47)O-3 thin films for piezoelectric microelectromechanical system devices. Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.32, pp.S1580 - S1582 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 32 S1580 S1582 scie scopus 000072212400079 Physics, Multidisciplinary Physics Article; Proceedings Paper