Han, YK Lee, TG Yom, SS Sons, MH Kim, EK Min, SK Lee, JY 2024-01-21T17:16:36Z 2024-01-21T17:16:36Z 2022-01-11 1998-02 0374-4884 https://pubs.kist.re.kr/handle/201004/143245 Titanium dioxide (TiO2) thin films have been grown on GaAs(100) substrate by metal organic chemical vapor deposition (MOCVD). X-ray diffraction patterns showed that the TiO2 thin films for deposition temperature T-s < 400 degrees C had polycrystalline anatase phase dominantly, while the films for T-s > 600 degrees C had mixture of polycrystalline anatase and rutile phases. No interface reaction between the TiO2 film and GaAs substrate for the film deposited at 400 degrees C was observed by scanning electron microscopy and transmission electron microscopy. However, an interdiffusion reaction occurred severely in the TiO2 film gown at T-s = 650 degrees C with a partial crystallization at the interface. English KOREAN PHYSICAL SOC Structural characterization of TiO2 thin films on GaAs(100) substrate by MOCVD Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.32, pp.S1538 - S1540 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 32 S1538 S1540 N scie scopus 000072212400066 2-s2.0-0032392909 Physics, Multidisciplinary Physics Article; Proceedings Paper CHEMICAL-VAPOR-DEPOSITION SI