Byun, YT Park, KH Kim, SH Choi, SS Yi, JC Lim, TK 2024-01-21T17:33:25Z 2024-01-21T17:33:25Z 2021-09-04 1998-01-20 0003-6935 https://pubs.kist.re.kr/handle/201004/143288 We report a single-mode P-P-p-i-n-N-N GaAs/AlGaAs W waveguide phase modulator with a high phase modulation efficiency and a low propagation loss. The phase modulator with a W-shaped refractive-index profile utilizes a novel epilayer structure to reduce the propagation loss associated with doped layers and to obtain a phase modulation efficiency larger than those of P-i-N double heterostructure modulators. The phase shift and propagation loss were measured with a Fabry-Perot resonance method at 1.31-mu m wavelength. A phase modulation efficiency as high as 34.6 degrees/V mm was measured for TE polarized light. Also propagation losses of less than 0.6 dB/cm were achieved. As a result, the W waveguide phase modulator that exhibits a high phase modulation efficiency and a low propagation loss have been experimentally realized for the first time as far as we know. (C) 1998 optical Society of America. English OPTICAL SOC AMER 1.3 MU-M WAVE-GUIDE DOUBLE HETEROSTRUCTURES DEPENDENCE Efficient single-mode GaAs/AlGaAs W waveguide phase modulator with a low propagation loss Article 10.1364/AO.37.000496 1 APPLIED OPTICS, v.37, no.3, pp.496 - 501 APPLIED OPTICS 37 3 496 501 scie scopus 000071501400014 2-s2.0-0031701834 Optics Optics Article 1.3 MU-M WAVE-GUIDE DOUBLE HETEROSTRUCTURES DEPENDENCE W waveguide