Kim, TG Son, CS Hwang, SM Kim, EK Min, SK Leem, SJ Park, JH 2024-01-21T17:33:38Z 2024-01-21T17:33:38Z 2022-01-11 1998-01-08 0013-5194 https://pubs.kist.re.kr/handle/201004/143291 GaAs/AlGaAs buried channel stripe lasers with a GaAs active layer completely embedded in AlGaAs barriers are obtained, for the first time, by simple wet-etching and single stage MOCVD growth. Room temperature operation is achieved at a wavelength of 869nm with threshold currents as low as 43.5mA (pulsed) and 59.9mA (CW) for a 250 mu m long uncoated cavity. English IEE-INST ELEC ENG LATERAL GROWTH-RATE GAAS Fabrication of GaAs/AlGaAs buried channel stripe lasers by single-stage metal organic chemical vapour deposition Article 10.1049/el:19980084 1 ELECTRONICS LETTERS, v.34, no.1, pp.85 - 87 ELECTRONICS LETTERS 34 1 85 87 scie scopus 000071892700059 2-s2.0-0032495448 Engineering, Electrical & Electronic Engineering Article LATERAL GROWTH-RATE GAAS