Kim, HJ Kim, SH Lee, JI Kang, KN Kim, DM Cho, K 2024-01-21T17:33:41Z 2024-01-21T17:33:41Z 2021-09-05 1998-01-08 0013-5194 https://pubs.kist.re.kr/handle/201004/143292 The authors report on the optical responses of a p-channel In0.49Ga0.51P/GaAs/In0.13Ga0.87As pseudomorphic MODFET with a gate length of 1 mu m. The photocurrent of the device is -0.36mA at V-gs = -0.2V and V-ds = -3.5V, with incident optical power of 2.15mW. A significantly high responsivity was obtained at low incident optical power range. Current gain cut-off frequency and maximum available gain cut-off frequency were increased by 20 and 10%, respectively, under optical illuminatnon. English IEE-INST ELEC ENG Optical responses of InGaP/GaAs/InGaAs P-channel double heterojunction pseudomorphic MODFET Article 10.1049/el:19980009 1 ELECTRONICS LETTERS, v.34, no.1, pp.126 - 128 ELECTRONICS LETTERS 34 1 126 128 scie scopus 000071892700087 2-s2.0-0032495418 Engineering, Electrical & Electronic Engineering Article Optical responses