Bae, C Lee, JK Lee, SH Park, YB Jung, HJ 2024-01-21T17:34:22Z 2024-01-21T17:34:22Z 2022-01-11 1998-01 1058-4587 https://pubs.kist.re.kr/handle/201004/143304 With increasing sputtering pressure and post-annealing temperature, uniform rodlike grains were obtained through bimodal grain size distribution. But, (00l) peaks of SrBi2Ta2O9 thin films were increased. Improvement of electrical properties is expected by removing the abnormal grain growth and c-axis oriented SrBi2Ta2O9. English GORDON BREACH SCI PUBL LTD CHEMICAL LIQUID DEPOSITION SOL-GEL METHOD BISMUTH BI Role of abnormal grain growth on the ferroelectric properties of SrBi2Ta2O9 thin films fabricated by RF magnetron sputtering Article 10.1080/10584589808202082 1 INTEGRATED FERROELECTRICS, v.21, no.1-4, pp.419 - 428 INTEGRATED FERROELECTRICS 21 1-4 419 428 scie scopus 000076544100038 2-s2.0-0032319328 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article CHEMICAL LIQUID DEPOSITION SOL-GEL METHOD BISMUTH BI ferroelectric SrBi2Ta2O9 Sr deficiency abnormal grain growth