Lee, JK Song, TK Jung, HJ 2024-01-21T17:40:20Z 2024-01-21T17:40:20Z 2021-09-05 1998-01 0257-8972 https://pubs.kist.re.kr/handle/201004/143408 SrBi(2)Ta(2)O(9)thin films were successfully fabricated by the radio frequency magnetron sputtering deposition method. The crystal structure of SrBi2Ta2O9 thin films grown on the Pt(111) layer was preferentially c-axis oriented. Surface microstructure shows the mixture of two kinds of morphologies. The Pt/SBTO/Pt capacitor shows P-r(*) - P-r(boolean AND) = 16.3 mu C/cm(2) and E-c = 50 kV/cm. After a fatigue test, the polarization versus electric field loop shifted toward a positive electric field. The interface between platinum and titanium layer was changed by the inter-diffusion of the Pt, Ti, O atoms after post-annealing at 800 degrees C for 2 h. (C) 1998 Elsevier Science S.A. English ELSEVIER SCIENCE SA CAPACITORS FATIGUE PB(ZR,TI)O-3 ELECTRODES BEHAVIOR Ferroelectric characteristics of SrBi2Ta2O9 thin films fabricated by the radio frequency magnetron sputtering deposition technique Article 10.1016/S0257-8972(97)00306-X 1 SURFACE & COATINGS TECHNOLOGY, v.98, no.1-3, pp.908 - 911 SURFACE & COATINGS TECHNOLOGY 98 1-3 908 911 scie scopus 000072647200021 2-s2.0-0043285400 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article; Proceedings Paper CAPACITORS FATIGUE PB(ZR,TI)O-3 ELECTRODES BEHAVIOR ferroelectric thin films SrBi2Ta2O9 radio frequency magnetron sputtering