Yom, SS 2024-01-21T17:40:23Z 2024-01-21T17:40:23Z 2021-09-05 1998-01 1058-4587 https://pubs.kist.re.kr/handle/201004/143409 Thin films of ferroelectric materials of PbTiO3, Pb(Zr, Ti)O-3, BaTiO3 and TiO2-x were prepared by metalorganic chemical vapor deposition (MOCVD) on various substrates of SrTiO3, fused silica glass, p-Si, p-InSb, n-InP, p-GaAs, indium tin oxide-coated soda lime glass, Pt/Ti/SiO2/Si, RuO2/SiO2/Si and Pt/RuO2/SiO2/Si substrates. Low temperature growth at substrate temperature below 500 degreesC of dielectric/ferroelectric thin films via in-situ MOCVD process was carried out to study structural and electrical properties. English GORDON BREACH PUBLISHING, TAYLOR & FRANCIS GROUP Low temperature growth of oxide thin films by metalorganic chemical vapor deposition Article 10.1080/10584589808238765 1 INTEGRATED FERROELECTRICS, v.20, no.1-4, pp.55 - 64 INTEGRATED FERROELECTRICS 20 1-4 55 64 scie scopus 000168669700005 2-s2.0-0032321085 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article MOCVD thin films oxide materials