Song, SH Kim, DM Kim, HJ Kim, SH Kang, KN Nathan, MI 2024-01-21T17:40:26Z 2024-01-21T17:40:26Z 2021-09-05 1998-01 1051-8207 https://pubs.kist.re.kr/handle/201004/143410 Electrical characteristics of a photonically controlled n-channel Al0.3Ga0.7As/GaAs/In0.13Ga0.87As double heterostructure pseudomorphic HEMT(PHEMT) is reported. Experimental results show a high optical sensitivity in the drain saturation current, the transconductance f(T), and f(max) at the optical power density P-opt = 78 mW/cm(2). We also proposed a new optoelectronic equivalent circuit model, which has photonically generated gate capacitances (C-gs,C-opt and C-gd,C-opt) and transconductance (g(m,opt)), for accurate description of de and microwave performance of PHEMT's under optical control, and verified the accuracy of the proposed model with measured and extracted scattering parameters from the equivalent photonic microwave model. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC GAAS Photonic microwave characteristics and modeling of an Al0.3Ga0.7As/GaAs/In0.13Ga0.87As double heterostructure pseudomorphic HEMT Article 10.1109/75.650981 1 IEEE MICROWAVE AND GUIDED WAVE LETTERS, v.8, no.1, pp.35 - 37 IEEE MICROWAVE AND GUIDED WAVE LETTERS 8 1 35 37 scie scopus 000071828200013 2-s2.0-0031672926 Engineering, Electrical & Electronic Engineering Article GAAS equivalent circuit HEMT modeling