Kwon, MS Lee, JY Suh, SH 2024-01-21T17:40:51Z 2024-01-21T17:40:51Z 2021-09-05 1998-01 0021-4922 https://pubs.kist.re.kr/handle/201004/143417 A CuPt-type ordered structure in CdZnTe has been observed in HgCdTe/CdxZn1-xTe/GaAs grown by interdiffused multilayer processing. Selected area electron diffraction and cross-sectional, high-resolution transmission electron microscopy have been employed to identify the ordered structure in CdZnTe. Selected area electron diffraction patterns showed two sets of (1/2 1/2 1/2) extra spots with symmetrical intensity through [110] projection, but no extra spots through [(1) over bar 10] projection. In the [110] projection, high-resolution images of ordered CdZnTe showed the doubling periodicity along [(1) over bar 11] or [1(1) over bar1$] through [110] projection. It was determined that the two variants of CuPt-type ordered-CdZnTe were formed on (1) over bar 11) or (1(1) over bar1$ through [110] projection. The two variants were observed with almost equal probability and had similar domain structures. English The Japan Society of Applied Physics Observation of CuPt-type ordered structure in CdZnTe during organometallic vapor phase epitaxial growth Article 10.1143/JJAP.37.L21 1 Japanese Journal of Applied Physics, v.37, no.1A, pp.L21 - L23 Japanese Journal of Applied Physics 37 1A L21 L23 N scopus 000071972200008 2-s2.0-0031707825 Physics, Applied Physics Article LONG-RANGE ORDER MOLECULAR-BEAM EPITAXY ALLOYS GA0.5IN0.5P SUBSTRATE LAYERS (111)B cadmium zinc telluride CuPt-type ordering organometallic vapor phase epitaxy interdiffused multilayer processing