Kim, EK Kim, TG Son, CS Kim, SI Park, YK Kim, Y Min, SK Choi, IH 2024-01-21T17:40:58Z 2024-01-21T17:40:58Z 2021-09-05 1998-01 0951-3248 https://pubs.kist.re.kr/handle/201004/143419 With carbon tetrabromide (CBr4) and carbon tetrachloride (CCl4) supplied, well-defined selective GaAs epilayers were successfully grown on V-groove and mesa patterned GaAs substrates by one-step atmospheric pressure metalorganic chemical vapor deposition. It appeared that the selectivity of the grown epilayers showing huge lateral growth rate enhancement depended on supplying gases. Inside a V-groove, the selectively grown GaAs epilayers exhibited a triangular and a round shape with supplying CBr4 and CC4, respectively. The selective growth was also done on the side walls of a mesa. In contrast, no growth was observed outside V-groove and on the top of the mesa. This kind of selective epitaxial technology has promising features for well-defined quantum structures and lateral p-n junction. English IOP PUBLISHING LTD CHEMICAL-VAPOR-DEPOSITION QUANTUM-WIRE STRUCTURES EFFICIENCY One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 Article 1 COMPOUND SEMICONDUCTORS 1997, v.156, pp.151 - 154 COMPOUND SEMICONDUCTORS 1997 156 151 154 scie scopus 000074779700035 2-s2.0-56249135314 Engineering, Electrical & Electronic Physics, Applied Physics, Multidisciplinary Physics, Condensed Matter Engineering Physics Article; Proceedings Paper CHEMICAL-VAPOR-DEPOSITION QUANTUM-WIRE STRUCTURES EFFICIENCY selective growth