Song, SK Cho, JS Choi, WK Jung, HJ Choi, DS Lee, JY Baik, HK Koh, SK 2024-01-21T17:41:15Z 2024-01-21T17:41:15Z 2021-09-05 1998-01 0925-4005 https://pubs.kist.re.kr/handle/201004/143424 Undoped SnOx thin films were deposited by a reactive ion assisted deposition technique at various ion beam potential (V-1) onto amorphous SiO2/Si substrates at room temperature. Crystalline structures of the films were investigated in terms of grain size, composition ratio, porosity and peak area percent of adsorbed oxygen. Sensitivities for propane (C3H8), methane (CH4) and hydrogen (H-2) gas in SnOx gas sensor devices were characterized at the substrate temperatures of 100-500 degrees C. The gas sensitivities depend on the grain size rather than the porosity. It is also proportioned to the amounts of adsorbed oxygen at room temperature by SPS analysis. (C) 1998 Elsevier Science S.A. All rights reserved. English ELSEVIER SCIENCE SA Structure and gas-sensing characteristics of undoped tin oxide thin films fabricated by ion-assisted deposition Article 10.1016/S0925-4005(97)00326-2 1 SENSORS AND ACTUATORS B-CHEMICAL, v.46, no.1, pp.42 - 49 SENSORS AND ACTUATORS B-CHEMICAL 46 1 42 49 N scie scopus 000073203600007 2-s2.0-0031655836 Chemistry, Analytical Electrochemistry Instruments & Instrumentation Chemistry Electrochemistry Instruments & Instrumentation Article SENSORS SnOx reactive ion assisted deposition grain size porosity gas sensitivity