Shin, KH Graham, CD Zhou, PY 2024-01-21T17:41:43Z 2024-01-21T17:41:43Z 2021-09-04 1998-01 0304-8853 https://pubs.kist.re.kr/handle/201004/143432 We observed that asymmetric magnetization reversal (AMR) can be destroyed partially or totally by magnetizing the sample in a sufficiently high magnetic field. The single AMR is not altered for applied fields below +/- 3 Oe. For applied fields between +/- 3 and +/- 250 Oe, the single AMR is increasingly altered by higher fields, but can be restored close to the original state. For fields greater than +/- 300 Oe, the single AMR is destroyed and cannot be restored to its original state by applying a field at room temperature. The experimental results can be explained by means of a metastable domain structure characterized by the induced anisotropy and the exchange anisotropy. (C) 1998 Elsevier Science B.V. All rights reserved. English ELSEVIER SCIENCE BV Effects of application of axial fields on asymmetric magnetization reversal Article 10.1016/S0304-8853(97)00915-3 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.177, pp.225 - 226 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 177 225 226 scie scopus 000072262000093 2-s2.0-0031706204 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper amorphous systems - soft magnetic anisotropy - induced domain wall pinning magnetization - asymmetrical