Kim, YT Shin, DS 2024-01-21T17:43:02Z 2024-01-21T17:43:02Z 2021-09-01 1997-12-15 0003-6951 https://pubs.kist.re.kr/handle/201004/143454 We have proposed a Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for a ferroelectric gate of metal ferroelectric insulator field effect transistor. A memory window of the proposed ferroelectric gate increases as electric field applied to the SrBi2Ta2O9 layer increases, and the memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si is relatively greater than that of Pt/SrBi2Ta2O9/SiO2/Si. As a result, the Pt/SrBi2Ta2O9(140 nm)/CeO2(25 nm)/SiO2/Si structure has sufficiently programmable memory windows from 0.9 to 2.5 V in the low gate voltage range of 4-7 V. (C) 1997 American Institute of Physics. [S0003-6951(97)01050-4]. English AMER INST PHYSICS Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor Article 10.1063/1.120374 1 APPLIED PHYSICS LETTERS, v.71, no.24, pp.3507 - 3509 APPLIED PHYSICS LETTERS 71 24 3507 3509 scie scopus A1997YL27300015 2-s2.0-0001354246 Physics, Applied Physics Article MEFISFET memory window low poeration voltage coercive field