Kim, DJ Kim, YT Park, JW 2024-01-21T17:46:03Z 2024-01-21T17:46:03Z 2021-09-05 1997-11-15 0021-8979 https://pubs.kist.re.kr/handle/201004/143506 Diffusion barrier properties of nanostructured amorphous Ta-Si-N thin films with different N concentrations have been investigated in metallurgical aspects of Cu metallization. When the N content exceeds 40 at. %, the Ta-Si-N film remains in the nanostructure phase even after annealing at 1100 degrees C for 1 h and effectively prevents Cu diffusion after annealing at 900 degrees C for 30 min. The reason for the excellent thermal stability is that excess N atoms disturb the grain growth of TaSi2 phase and keep the Ta-Si-N film in the nanostructure phase during the high temperature annealing. The Ta-Si-N film with N content less than 40 at. % fails to prevent the Cu diffusion after annealing at 700 degrees C for 30 min. (C) 1997 American Institute of Physics. English AMER INST PHYSICS DEPOSITED TUNGSTEN Nanostructured Ta-Si-N diffusion barriers for Cu metallization Article 10.1063/1.366346 1 JOURNAL OF APPLIED PHYSICS, v.82, no.10, pp.4847 - 4851 JOURNAL OF APPLIED PHYSICS 82 10 4847 4851 scie scopus A1997YG47300022 2-s2.0-0041996796 Physics, Applied Physics Article DEPOSITED TUNGSTEN nanostructure Ta-Si-N diffusion barrier Cu metallization