Kim, TS Kim, DJ Lee, JK Jung, HJ 2024-01-21T17:47:00Z 2024-01-21T17:47:00Z 2021-09-05 1997-11 0734-2101 https://pubs.kist.re.kr/handle/201004/143522 As a method for lowering deposition temperature, the effect of 50% excess Pb addition in Pb(Zr0.52T0.48)O-3 ceramic target on Pb(Zr0.52T0.48)O-3 thin films (4000-5000 Angstrom thickness) was studied. The PZT thin films were grown on Pt/Ti/SiO2/Si(100) substrates by using radio frequency magnetron sputtering method. The existing phase of PZT thin films was confirmed with x-ray diffraction analysis, and growth morphologies were studied with scanning electron microscopy. At the substrate temperature of 440 degrees C, only the pyrochlore phase existed, and as the substrate temperature was increased, the amount of perovskite phase also increased. It was finally found that the PZT thin films without pyrochlore phase could be fabricated at the temperature as low as 520 degrees C. It was also observed that the quality of the final phases after the postannealing process severely depends on the initial perovskite phase purity during deposition. The electrical properties of PZT thin films were characterized through P-E hysteresis curves, dielectric constant and loss, and fatigue measurements. It was confirmed that the electrical properties of PZT thin films were closely related to the crystallographic microstructure of PZT thin films. (C) 1997 American Vacuum Society. [S0734-2101(97)03506-9]. English AMER INST PHYSICS Fabrication of excess PbO-doped Pb(Zr0.52Ti0.48)O-3 thin films using radio frequency magnetron sputtering method Article 10.1116/1.580835 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.15, no.6, pp.2831 - 2835 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 15 6 2831 2835 scie scopus A1997YG05800001 2-s2.0-0000441822 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article PBO PZT sputtering