Kang, M Kim, J Lim, T Oh, I Jeon, B Jung, I An, C 2024-01-21T18:01:24Z 2024-01-21T18:01:24Z 2021-09-01 1997-11 0022-3093 https://pubs.kist.re.kr/handle/201004/143539 The optical and electrical properties before and after annealing of amorphous silicon films, deposited by electron cyclotron resonance plasma chemical vapor deposition as a function of substrate temperature, were investigated. The properties of non-annealed Si films were improved with increasing substrate temperature. On the other hand, Hall mobility of annealed Si films decreased with increasing substrate temperature. (C) 1997 Published by Elsevier Science B.V. English ELSEVIER SCIENCE BV The characteristics before and after annealing of amorphous silicon films prepared by ECR plasma CVD Article 10.1016/S0022-3093(97)00424-9 1 JOURNAL OF NON-CRYSTALLINE SOLIDS, v.221, no.1, pp.103 - 105 JOURNAL OF NON-CRYSTALLINE SOLIDS 221 1 103 105 scie scopus A1997YH78400013 2-s2.0-0031549768 Materials Science, Ceramics Materials Science, Multidisciplinary Materials Science Letter ECR CVD a-Si:H film annealing poly silicon