Lim, SH Choi, YS Han, SH Kim, HJ Shima, T Fujimori, H 2024-01-21T18:06:23Z 2024-01-21T18:06:23Z 2021-09-05 1997-09 0018-9464 https://pubs.kist.re.kr/handle/201004/143623 The magnetostriction of TbFe and TbFeB thin films is systematically investigated over a wide composition range from 40.2 to 68.1 at.% Tb for the B-free alloys and from 44.1 to 66.6 at.% Tb for the B containing thin films. The films were fabricated by rf magnetron sputtering. The microstructure mainly consists of an amorphous phase at low Tb contents and, at high Tb contents, a mixture of an amorphous phase and an alpha Tb phase. Excellent magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both TbFe and TbFeB thin films; for example, a magnetostriction of 138 ppm is obtained in a TbFeB thin film at a magnetic field as low as 30 Oe. These excellent magnetostrictive properties of the present thin films are supported by the excellent magnetic softness, the coercivity below 10 Oe and a typical squared-loop shape with the saturation field as low as I kOe. It is considered that, due to the excellent low field magnetostrictive characteristics, the present TbFe based magnetostrictive thin films are suitable for Si based microdevices. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC TB-FE FILMS DEPENDENCE Magnetostriction of Tb-Fe-(B) thin films fabricated by RF magnetron sputtering Article 10.1109/20.619622 1 IEEE TRANSACTIONS ON MAGNETICS, v.33, no.5, pp.3940 - 3942 IEEE TRANSACTIONS ON MAGNETICS 33 5 3940 3942 scie scopus A1997XW56500145 2-s2.0-0031221614 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article; Proceedings Paper TB-FE FILMS DEPENDENCE magnetostriction Tb-Fe-(B) thin films RF magnetron sputtering