Kang, M. Kim, J. Lim, T. Oh, I. Jeon, B. Jung, I. An, C. 2024-01-21T18:10:31Z 2024-01-21T18:10:31Z 2021-09-02 1997-08 0021-4922 https://pubs.kist.re.kr/handle/201004/143693 The relation between film quality and deposition rate of hydrogenated amorphous silicon films deposited by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4 has been investigated. The properties of amorphous silicon films were improved with increasing deposition rate; photoconductivity increased and optical band gap, full width at half maximum and the ratio of the concentration of dihydride to that of monohydride decreased. The high deposition rate was a very important factor to obtain high quality amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4. English Japan Society of Applied Physics Amorphous films Amorphous silicon Chemical vapor deposition Electron cyclotron resonance Energy gap Film growth Hydrogenation Photoconductivity Plasma applications Semiconducting silicon Semiconductor growth Silanes Full width at half maximum (FWHM) Semiconducting films A study on the relation between film quality and deposition rate for amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4 Article 10.1143/jjap.36.l986 1 Japanese Journal of Applied Physics, Part 2: Letters, v.36, no.8 PART A, pp.L986 - L988 Japanese Journal of Applied Physics, Part 2: Letters 36 8 PART A L986 L988 scopus 2-s2.0-0031198015 Article Amorphous films Amorphous silicon Chemical vapor deposition Electron cyclotron resonance Energy gap Film growth Hydrogenation Photoconductivity Plasma applications Semiconducting silicon Semiconductor growth Silanes Full width at half maximum (FWHM) Semiconducting films Electron cyclotron resonance plasma chemical vapor deposition Hydrogenated amorphous silicon