오인환 전법주 임태훈 정일현 2024-01-21T18:11:24Z 2024-01-21T18:11:24Z 2022-01-10 1997-07 https://pubs.kist.re.kr/handle/201004/143707 Characteristics of silicon oxide films prepared by chemical vapor deposition using ECR plasma source ECR 플라즈마를 이용한 화학증착법에 의해 제조된 실리콘 산화막의 특성 Article 3 화학공학 = Journal of the Korean institute of chemical engineers, v.35, no.3, pp.374 - 379 화학공학 = Journal of the Korean institute of chemical engineers 35 3 374 379 electron cyclotron resonance chemical vapor deposition microwave power