Leon, R Senden, TJ Kim, Y Jagadish, C Clark, A 2024-01-21T18:12:20Z 2024-01-21T18:12:20Z 2021-09-01 1997-06-30 0031-9007 https://pubs.kist.re.kr/handle/201004/143723 Differences in InGaAs island nucleation on vicinal (100) GaAs surfaces as a function of miscut angle are presented. Arrhenius plots of saturation island densities show changes in activation energy and critical cluster size, which are interpreted as resulting from nucleation through different mechanisims: homogeneously (on terraces) and heterogeneously on monatomic and multiatomic steps. Furthermore, a link between step separation and island; uniformity is observed. Step availability is found to be a major determinant of island uniformity at temperatures where clusters are not mobile. English AMERICAN PHYSICAL SOC SEMICONDUCTOR QUANTUM DOTS SELF-ORGANIZED GROWTH VISIBLE LUMINESCENCE SURFACE-DIFFUSION PHOTOLUMINESCENCE ENSEMBLES ARRAYS Nucleation transitions for InGaAs Islands on vicinal (100) GaAs Article 10.1103/PhysRevLett.78.4942 1 PHYSICAL REVIEW LETTERS, v.78, no.26, pp.4942 - 4945 PHYSICAL REVIEW LETTERS 78 26 4942 4945 scie scopus A1997XH03800013 Physics, Multidisciplinary Physics Article SEMICONDUCTOR QUANTUM DOTS SELF-ORGANIZED GROWTH VISIBLE LUMINESCENCE SURFACE-DIFFUSION PHOTOLUMINESCENCE ENSEMBLES ARRAYS GaAs InGaAs quantum dots MOCVD