Park, YJ Kim, EK Min, SK Park, IW Yeom, TH Munekata, H Kukimoto, H 2024-01-21T18:13:49Z 2024-01-21T18:13:49Z 2022-01-11 1997-06 0374-4884 https://pubs.kist.re.kr/handle/201004/143748 Four Mn-related EPR centers have been observed in p-type Mn-doped VGF-grown GaAs samples at 4 K. Particularly, a well defined Mn-Mn center at g=2.90 without any disturbance caused by the Mn-0 center could be obtained at 20 K. The observed EPR centers of the Mn-Oa, center at g=2.00, the Mn-Mn at g=2.90, and the Mn-0 at g=5.83 and 2.82 almost disappeared after the thermal treatment and quenching processes at 850 degrees C for 10 min. These thermal behaviors seem to be closely related with the out-diffusion of Ga,, impurity segregation, and the change of the internal stress, respectively. Evidence for the existence of Mn-0 state acting as a charge compensation center in GaAs:Mn is also presented. English KOREAN PHYSICAL SOC GALLIUM-ARSENIDE MANGANESE Characterization of Mn-centers in vertical gradient freeze-GaAs crystals by electron paramagnetic resonance Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.S113 - S116 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 30 S113 S116 scie scopus A1997XJ37500022 2-s2.0-0031479150 Physics, Multidisciplinary Physics Article; Proceedings Paper GALLIUM-ARSENIDE MANGANESE