Kim, TG Kim, EK Min, SK Jeon, JI Jeon, SJ Park, JH 2024-01-21T18:15:13Z 2024-01-21T18:15:13Z 2021-09-05 1997-06 0374-4884 https://pubs.kist.re.kr/handle/201004/143772 A high-performance narrow-stripe GaAs/AlGaAs quantum wire (QWR) laser with a p-n junction current-blocking layer has been designed, simulated and fabricated. For the design's aspect, the thicknesses and the doping concentrations of p- and n-current-blocking layers, the conductive stripe width, the calculated light wavelength of both quantum well and quantum wire, etc. were considered. In addition, to see the effect of current-confinement into the QWR active region, the physical structure of the QWR laser was modeled as a simple electrical circuit. Based on these simulated results, the QWR laser was fabricated using two-step MOCVD growth with a wet etching technique. English KOREAN PHYSICAL SOC Design and fabrication of a narrow stripe GaAs/AlGaAs quantum wire laser Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.S123 - S126 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 30 S123 S126 scie scopus A1997XJ37500024 Physics, Multidisciplinary Physics Article; Proceedings Paper design and fabrication