Kim, EK Lee, MS Kim, SI Park, YJ Min, SK Lee, JY 2024-01-21T18:15:34Z 2024-01-21T18:15:34Z 2021-09-05 1997-06 0169-4332 https://pubs.kist.re.kr/handle/201004/143778 We have studied an effect of InGaAs layer on the structural and optical properties of AlGaAs/GaAs quantum wires (QWRs) grown on V-grooved GaAs(100) substrates by metalorganic chemical vapor deposition. The In0.15Ga0.85As layer with thickness of 2-4 mu were prepared on GaAs(100) substrates, and the V-grooves were defined with 20 mu m intervals by photolithographic method. The quantum structures with five periods of 5 nm GaAs and 25 nm Al0.5Ga0.5As layers were grown on V-grooved InGaAs/GaAs substrates. From the scanning electron microscope and transmission electron microscope measurements, it appeared that the thick InGaAs layer caused to form several facets in the side walls of V-grooves. Especially, the side walls near the bottom were convexly shaped, resulting in narrowing the width near the bottom of the V-groove. In the photoluminescence (PL) spectra, QWRs grown on this substrate showed a blue shift, while any PL signal from the top-quantum wells on InGaAs layer has not appeared. From these results, it was suggested that the InGaAs layer plays an important role for the lateral tightening of QWRs. English ELSEVIER SCIENCE BV InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved GaAs substrates Article 1 APPLIED SURFACE SCIENCE, v.117, pp.690 - 694 APPLIED SURFACE SCIENCE 117 690 694 N scie scopus A1997XF09700124 2-s2.0-0031548158 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article; Proceedings Paper CHEMICAL-VAPOR-DEPOSITION FABRICATION LASERS CCL4 quantum wire InGaAs layer V-grooved GaAs MOCVD TEM PL