Kim, YT Lee, CW 2024-01-21T18:30:57Z 2024-01-21T18:30:57Z 2022-01-11 1997-05 0947-8396 https://pubs.kist.re.kr/handle/201004/143806 We have suggested a new n(+)-Si/Ti/WNx/Al multilayer metallization scheme. The contact resistance has been strongly related to the plasma nitridation of the Ti surface because the contact resistance of n(+)-Si/Ti/WNx/Al with contact size of 0.49 mu m(2) about 100-130 Omega, whereas without the nitridation of the Ti surface the contact resistance rises up to 200-390 Omega. F-19 (p,alpha gamma) nuclear resonance analysis and Auger electron spectroscopy reveal that F adatoms on the Ti surface are successfully removed by the 30 s nitridation and as a result, the low contact resistance can be achieved. English SPRINGER VERLAG PLASMA-DEPOSITED TUNGSTEN THIN-FILMS AL METALLIZATION PERFORMANCE BARRIER SILICON Low contact resistance of n(+)-Si/Ti/WNx/Al submicron contact structures Article 10.1007/s003390050508 1 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.64, no.5, pp.497 - 499 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 64 5 497 499 scie scopus A1997XB49600013 2-s2.0-0031140366 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article PLASMA-DEPOSITED TUNGSTEN THIN-FILMS AL METALLIZATION PERFORMANCE BARRIER SILICON