Kim, MS Lee, C Park, SK Choi, WC Kim, EK Kim, SI Ahn, BS Min, SK 2024-01-21T18:32:27Z 2024-01-21T18:32:27Z 2021-09-04 1997-05 0361-5235 https://pubs.kist.re.kr/handle/201004/143832 Non-ozone layer destructive chlorofluorocarbon (CFC) alternatives have been initially used for laser-induced thermochemical etching of GaAs. The CFC alternatives used here are CHClF2 and C2H2F4. Respective etching rates of 188 and 160 mu m/s were achieved using CHClF2 and C2H2F4 gases. Aspect ratios of 2.5 and 1.5 were achieved with a single laser scan for CHClF2 and C2H2F4, respectively. The presence of some reaction products deposited on the etched region was dependent on three variables: laser power, scan speed, and gas pressure. Chemical compositions of the reaction products were measured by Auger electron spectroscopy. English MINERALS METALS MATERIALS SOC V-COMPOUND SEMICONDUCTORS Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases Article 10.1007/s11664-997-0115-7 1 JOURNAL OF ELECTRONIC MATERIALS, v.26, no.5, pp.436 - 439 JOURNAL OF ELECTRONIC MATERIALS 26 5 436 439 scie scopus A1997WY10100004 2-s2.0-0342441249 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article V-COMPOUND SEMICONDUCTORS Ar ion laser chlorofluorocarbon (CFC) alternative GaAs high aspect ratio high speed etching laser-induced etching maskless