Byun, C Jang, JW Kim, IT Hong, KS Lee, BW 2024-01-21T18:34:39Z 2024-01-21T18:34:39Z 2022-01-10 1997-04 0025-5408 https://pubs.kist.re.kr/handle/201004/143870 Phase transitions of TiO2 thin films prepared by MOCVD were investigated using X-ray diffraction, scanning electron microscope, transmission electron microscope, and secondary ion mass spectroscope. It was found that the insitu deposited thin films showed the onset of anatase-to-rutile transition at a much lower temperature of 400 degrees C. In order to reveal the mechanism responsible for the low temperature transition, the transition of titanium isopropoxide derived and titanium tetra-chloride derived powders were investigated. The onset temperatures of transition were 450 degrees C and 700 degrees C, respectively. It is therefore suggested that ''source effect'' is the main mechanism of low temperature transition. It is also suggested that the heterogeneous nucleation on the surface of substrate is responsible for the transition shown by in-situ deposited and post-annealed titania thin films being much faster than that shown by titania powders. Copyright (C) 1997 Elsevier Science Ltd. English PERGAMON-ELSEVIER SCIENCE LTD TIO2 TEMPERATURE Anatase-to-rutile transition of titania thin films prepared by MOCVD Article 10.1016/S0025-5408(96)00203-6 1 MATERIALS RESEARCH BULLETIN, v.32, no.4, pp.431 - 440 MATERIALS RESEARCH BULLETIN 32 4 431 440 scie scopus A1997WR36000005 2-s2.0-0031123504 Materials Science, Multidisciplinary Materials Science Article TIO2 TEMPERATURE oxides thin films vapor disposition X-ray diffraction phase transitions