Park, YJ OKeeffe, P Ozasa, K Mutoh, H Aoyagi, Y Min, SK 2024-01-21T18:36:12Z 2024-01-21T18:36:12Z 2021-09-05 1997-03-01 0021-8979 https://pubs.kist.re.kr/handle/201004/143897 We have investigated an oxygen gas-pulsed plasma in conjunction with the enhancement of atomic oxygen radical O* flux and its application. The measured mean O* flux of 5.9x10(15) atoms/cm(2) s from the gas-pulsed plasma with a duty cycle of 50% (periodically opened for 0.3 s and closed for 0.3 s) at 32 seem is 1.6 times enhanced compared to that of a continuous wave plasma and is in good agreement with the increment obtained with the time averaged value of transient optical emission profiles of O* at 777.6 nm. The generation of a higher O* flux was interpreted by the mitigation of a recombinative reaction process through the interruption of gas flow injections in the gas pulsed plasma. As a preliminary application, an increase in critical temperature of superconducting YBa2Cu3O7-x thin films was achieved by the gas-pulsed plasma oxidation with a duty cycle of 50%. (C) 1997 American Institute of Physics. English AMER INST PHYSICS BEAM EPITAXY RADICAL-BEAM GENERATION FILMS Oxygen atomic flux O-* enhancement by gas-pulsed electron cyclotron resonance plasma Article 10.1063/1.364263 1 JOURNAL OF APPLIED PHYSICS, v.81, no.5, pp.2114 - 2118 JOURNAL OF APPLIED PHYSICS 81 5 2114 2118 scie scopus A1997WK08800011 2-s2.0-0005903397 Physics, Applied Physics Article BEAM EPITAXY RADICAL-BEAM GENERATION FILMS oxygen gas ECR plasma gas pulsed plasma radical flux optical emission profile