Kim, TG Hwang, SM Kim, EK Min, SK Jeon, JI Leem, SJ Jeong, J Park, JH 2024-01-21T18:37:49Z 2024-01-21T18:37:49Z 2021-09-05 1997-03 1041-1135 https://pubs.kist.re.kr/handle/201004/143925 V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by, combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (t(p-CBL)), and a doping concentration (n(p-CBL)) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 mu m, t(p-CBL) = 2 mu m, and n(p-CBL), = 1 x 10(18) cm(-3). The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers Article 1 IEEE PHOTONICS TECHNOLOGY LETTERS, v.9, no.3, pp.274 - 276 IEEE PHOTONICS TECHNOLOGY LETTERS 9 3 274 276 scie scopus A1997WJ31800002 2-s2.0-0031104012 Engineering, Electrical & Electronic Optics Physics, Applied Engineering Optics Physics Article MOCVD p-n junction isolation two step growth with a wet etching technique V-grooved inner stripe quantum-wire laser