Lee, MS Kim, EK Kim, SI Hwang, SM Kim, CK Min, SK Lee, JY 2024-01-21T18:37:53Z 2024-01-21T18:37:53Z 2021-09-05 1997-03 0038-1098 https://pubs.kist.re.kr/handle/201004/143926 An effect of InGaAs layer on the growth of A1GaAs/GaAs quantum wires (QWRs) on V-grooved InGaAs/GaAs(100) substrates has been studied. The structures are grown by atmospheric pressure metalorganic chemical deposition (MOCVD) and characterized with scanning electron microscope, transmission electron microscope and photoluminescence (PL) measurements. The thick InGaAs layer causes to form several facets in the side walls of V-grooves. Especially, the side walls near the bottom are convexly shaped, resulting in narrowing the width near the bottom of V-groove. QWRs grown on this substrate show a blue shift in the PL spectra, while any PL signal from the top-QWLs on InGaAs layer is not obtained. These results may be originated from the narrowing effect of the InGaAs layer on the bottom and from the poor crystallinity of the top epilayer on the InGaAs layer with many dislocations. (C) 1997 Elsevier Science Ltd. English PERGAMON-ELSEVIER SCIENCE LTD CHEMICAL-VAPOR-DEPOSITION GAAS FABRICATION LASERS CCL4 InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates Article 10.1016/S0038-1098(96)00670-9 1 SOLID STATE COMMUNICATIONS, v.101, no.9, pp.705 - 708 SOLID STATE COMMUNICATIONS 101 9 705 708 scie scopus A1997WJ15100013 2-s2.0-0031097539 Physics, Condensed Matter Physics Article CHEMICAL-VAPOR-DEPOSITION GAAS FABRICATION LASERS CCL4 quantum wells semiconductors epitaxy scanning and transmission electron microscopy optical properties