Choi, WB Ju, BK Lee, YH Haskard, MR Sung, MY Oh, MH 2024-01-21T18:38:24Z 2024-01-21T18:38:24Z 2021-09-04 1997-03 https://pubs.kist.re.kr/handle/201004/143935 A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 degrees C with an applied voltage as small as 35 V-dc, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 mu m thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis. (C) 1997 American Vacuum Society. English AMER INST PHYSICS SILICON-ON-INSULATOR Anodic bonding technique under low temperature and low voltage using evaporated glass Article 10.1116/1.589603 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.15, no.2, pp.477 - 481 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 15 2 477 481 scopus A1997WU26700058 2-s2.0-0000935967 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Physics, Applied Engineering Science & Technology - Other Topics Physics Article; Proceedings Paper SILICON-ON-INSULATOR bonding insulating film glass film