Kim, S Ju, BK Lee, YH Park, BS Baik, YJ Lim, S Oh, MH 2024-01-21T18:38:31Z 2024-01-21T18:38:31Z 2021-09-01 1997-03 https://pubs.kist.re.kr/handle/201004/143937 Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 Angstrom. The maximum current density of 800 mu A/cm(2) and the threshold voltage of 600 V were obtained from the diamond-tip held emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip held emitter array was not varied over a wide range of vacuum pressure relatively to the hat diamond film. (C) 1997 American Vacuum Society. English AMER INST PHYSICS VACUUM MICROELECTRONICS Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique Article 10.1116/1.589608 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.15, no.2, pp.499 - 502 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 15 2 499 502 scopus A1997WU26700063 2-s2.0-0003663944 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Physics, Applied Engineering Science & Technology - Other Topics Physics Article; Proceedings Paper VACUUM MICROELECTRONICS FED field emission diamond-tip transfer mold technique