Lee, JK Song, TK Jung, HJ 2024-01-21T18:41:41Z 2024-01-21T18:41:41Z 2022-01-11 1997-01 1058-4587 https://pubs.kist.re.kr/handle/201004/143991 SBTO thin films were successfully fabricated by r.f. magnetron sputtering deposition. Bismuth content exists mainly in the form of (Bi2O2)(2+) at the surface and the elemental bismuth forms at the interface between the SBTO layer and the Pt electrode. The crystal structure of SBTO films grown on the Pt(lll) layer were preferentially c-axis oriented. The Pt/SBTO/Pt capacitor shows P*r-P(boolean AND)r=16.3 mu C/cm(2) and Ec=50kV/cm. English TAYLOR & FRANCIS LTD FERROELECTRIC CAPACITORS FATIGUE ELECTRODES Characteristics of SrBi2Ta2O9 thin films fabricated by the RF magnetron sputtering technique Article 1 INTEGRATED FERROELECTRICS, v.15, no.1-4, pp.115 - 125 INTEGRATED FERROELECTRICS 15 1-4 115 125 scie scopus A1997WR71500013 2-s2.0-0031333258 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article FERROELECTRIC CAPACITORS FATIGUE ELECTRODES