Lee, JK Song, TK Kim, TS Jung, HJ 2024-01-21T18:42:05Z 2024-01-21T18:42:05Z 2022-01-11 1997-01 1058-4587 https://pubs.kist.re.kr/handle/201004/143998 Crystal orientation of the SrBi2Ta2O9, CaBi2Ta2O9 thin films were controlled by the r.f. sputtering pressure. The Pt/SBTO/Pt capacitor having a c-axis oriented films shows P*r-P boolean AND r=16.3 mu C/cm(2) and Ec=50kV/cm which is superior than the films showing polycrystalline structure. The surface morphologies of the SrBi2Ta2O9 thin films show two kinds of grains which was changed by the sputtering conditions. English GORDON BREACH SCI PUBL LTD CAPACITORS ELECTRODES FATIGUE Crystal orientation dependencies on the ferroelectric properties of SrBi2Ta2O9, CaBi2Ta2O9 thin films fabricated by the rf magnetron sputtering technique Article 10.1080/10584589708221713 1 INTEGRATED FERROELECTRICS, v.18, no.1-4, pp.369 - 376 INTEGRATED FERROELECTRICS 18 1-4 369 376 scie scopus A1997YG17500034 2-s2.0-0031332587 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article; Proceedings Paper CAPACITORS ELECTRODES FATIGUE ferroelectric SrBi2Ta2O9 CaBi2Ta2O9 rf sputtering