Kim, JS Song, JH Suh, SH Chung, SJ 2024-01-21T19:05:10Z 2024-01-21T19:05:10Z 2021-09-05 1997-01 0038-1098 https://pubs.kist.re.kr/handle/201004/144160 Effect of nitrogen plasma on magnesium incorporation has been investigated for ZnMgSSe based p-n junction device grown on (001) GaAs substrates by molecular beam epitaxy. It was found that magnesium composition in a nitrogen-doped p-type ZnMgSSe layer was larger than that in an n-type ZnMgSSe layer. The magnesium composition increased with increasing nitrogen content in p-type ZnMgSSe. To obtain p- and n-type ZnMgSSe layers of symmetric composition, magnesium beam flux should be reduced during growth of nitrogen-doped p-type ZnMgSSe layer to compensate this enhanced incorporation of magnesium in the nitrogen-doped ZnMgSSe layer. Copyright (C) 1996 Published by Elsevier Science Ltd. English PERGAMON-ELSEVIER SCIENCE LTD QUANTUM-WELLS Enhancement of magnesium incorporation in nitrogen doped ZnMgSSe grown by molecular beam epitaxy Article 10.1016/S0038-1098(96)00528-5 1 SOLID STATE COMMUNICATIONS, v.101, no.1, pp.57 - 61 SOLID STATE COMMUNICATIONS 101 1 57 61 scie scopus A1997VW95600011 2-s2.0-0030784384 Physics, Condensed Matter Physics Article QUANTUM-WELLS magnesium