Park, YJ Yeom, TH Park, IW Choh, SH Min, SK 2024-01-21T19:05:52Z 2024-01-21T19:05:52Z 2021-09-04 1997-01 0038-1098 https://pubs.kist.re.kr/handle/201004/144172 The dependences of Cr2+ and Cr3+ electron paramagnetic resonance (EPR) signals as a function of Cr concentration have been investigated in conjunction with clarifying the atomic configuration for obtaining semi-insulating properties in a vertical gradient freeze (VGF)-GaAs single crystal codoped with Cr and In (VGF-GaAs:Cr,In). Cr2+ EPR signals are observed in both samples of semi-insulating and semiconducting GaAs: Cr,In single crystals, whereas Cr3+ EPR signals can be observed only in semi-insulating samples. The semi-insulating properties become obvious when increasing the intensity of Cr3+ and Cr2+ EPR signals in VGF-GaAs:Cr,In crystals. Isolated Cr-Ga(3+) ions play an important role in GaAs as a charge compensation center for obtaining semi-insulating property. Copyright (C) 1996 Elsevier Science Ltd English PERGAMON-ELSEVIER SCIENCE LTD BULK GAAS Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property Article 10.1016/S0038-1098(96)00586-8 1 SOLID STATE COMMUNICATIONS, v.101, no.4, pp.219 - 223 SOLID STATE COMMUNICATIONS 101 4 219 223 scie scopus A1997WA27400002 2-s2.0-0030735774 Physics, Condensed Matter Physics Article BULK GAAS semiconductors crystal growth impurities in semiconductors electronic states electron paramagnetic resonance