Lee, KS Kang, YM Baik, S 2024-01-21T19:06:26Z 2024-01-21T19:06:26Z 2021-09-01 1997-01 1058-4587 https://pubs.kist.re.kr/handle/201004/144182 Epitaxial Pb(ZrxTi1-x)O-3 (x=0.0 similar to 0.32) thin-films were successfully grown on MgO(001) single crystal by RF magnetron sputtering. Lattice constants and crystal quality of the films were measured by the X-ray theta-2 theta scan and the FWHM of (001) rocking curves, respectively. Degree of c axis orientation and crystal quality of the films improved gradually with increasing Zr concentration. High temperature X-ray technique was employed to study the domain formation as a function of temperature during cooling from cubic phase to tetragonal phase. The initial values of a at the Curie temperature also increased with increasing Zr concentration. English GORDON BREACH SCI PUBL LTD STRAIN RELAXATION DEPOSITION MGO(100) Domain structure of epitaxial PZT thin films grown on MgO(001) by RF magnetron sputtering Article 10.1080/10584589708019975 1 INTEGRATED FERROELECTRICS, v.14, no.1-4, pp.43 - 49 INTEGRATED FERROELECTRICS 14 1-4 43 49 scie scopus A1997WR71400006 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article; Proceedings Paper STRAIN RELAXATION DEPOSITION MGO(100) Domain Structure Epitaxy PZT X-ray diffraction