Lee, MH Kim, MG Song, HK 2024-01-21T19:07:43Z 2024-01-21T19:07:43Z 2021-09-04 1996-12-15 0040-6090 https://pubs.kist.re.kr/handle/201004/144202 Stoichiometric VO2 thin films were fabricated on glass substrates by reactive electron-beam evaporation under controlled oxygen pressures. Rapid thermal annealing (RTA) was examined as a promising annealing method to crystallize the as-deposited thin film. An RTA temperature of 400 degrees C and time of 20-30 s were found to be optimum annealing conditions to crystallize the thin films, as confirmed by X-ray diffraction analysis and examining the him thermochromism. VO2 thin films were doped with 1-6 at.% Sn to fabricate V1-xSnxO2 thin films. The Sn-doped VO2 thin films exhibited distinct thermochromism as the undoped thin films, however, they showed significantly higher transition temperatures than undoped VO2 thin films. English ELSEVIER SCIENCE SA VANADIUM DIOXIDE OPTICAL-PROPERTIES TEMPERATURE TRANSITION DEPOSITION OXIDE Thermochromism of rapid thermal annealed VO2 and Sn-doped VO2 thin films Article 10.1016/S0040-6090(96)09201-2 1 THIN SOLID FILMS, v.290, pp.30 - 33 THIN SOLID FILMS 290 30 33 scie scopus A1996WB81900008 2-s2.0-0030396053 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper VANADIUM DIOXIDE OPTICAL-PROPERTIES TEMPERATURE TRANSITION DEPOSITION OXIDE annealing vanadium oxide evaporation