Son, CS Kim, SI Min, BD Kim, Y Kim, EK Min, SK Choi, IH 2024-01-21T19:08:10Z 2024-01-21T19:08:10Z 2022-01-11 1996-12 0021-4922 https://pubs.kist.re.kr/handle/201004/144210 Heavily carbon (C)-doped GaAs epilayers with hole concentrations as high as 3.1 x 10(20) cm(-3) were grown by atmospheric pressure metalorganic chemical vapor deposition using CBr4 as the dopant source. The electrical properties of C-doped GaAs epilayers simultaneously grown on exact and 2 degrees off (100) GaAs substrates were investigated. The hole concentration in the epilayer grown on the exact (100) substrate was higher than that in the epilayer on the 2 degrees off (100) substrate grown under equivalent conditions. The hole concentration for the exact (100) substrates exhibited saturation as the growth temperature increased. The hole concentration for the 2 degrees off (100) substrates exhibited thermal activation behavior. The activation energy of the hole concentration as a function of the growth temperature did not change significantly regardless of the V/III ratio (E(a) similar to 63 and 71 kcal/mol). The higher desorption rate of C-containing species due to the higher adsorption rate of AsHx species on the 2 degrees off (100) substrate; which has a higher step density than the exact (100) substrate, is responsible for this thermal activation behavior. English JAPAN SOC APPLIED PHYSICS MOLECULAR-BEAM EPITAXY P-TYPE GAAS PHASE EPITAXY ORIENTATION DEPENDENCE TETRABROMIDE TEMPERATURE PHOTOLUMINESCENCE LAYERS CCL4 Electrical properties of heavily carbon-doped GaAs epilayers grown by atmospheric pressure metalorganic chemical vapor deposition using CBr4 Article 10.1143/JJAP.35.6562 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.35, no.12B, pp.6562 - 6565 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 35 12B 6562 6565 scie scopus A1996WF48000041 2-s2.0-0004796717 Physics, Applied Physics Article; Proceedings Paper MOLECULAR-BEAM EPITAXY P-TYPE GAAS PHASE EPITAXY ORIENTATION DEPENDENCE TETRABROMIDE TEMPERATURE PHOTOLUMINESCENCE LAYERS CCL4 carbon incorporation carbon tetrabromide 2 degrees off (100) GaAs electrical property Hall analysis atmospheric pressure metalorganic chemical vapor deposition