Koh, SK Jang, HG Choi, WK Jung, HJ Kondranine, SG Kralkina, EA 2024-01-21T19:09:09Z 2024-01-21T19:09:09Z 2021-09-05 1996-12 0034-6748 https://pubs.kist.re.kr/handle/201004/144227 We developed and evaluated a new partially ionized beam (PIB) source to deposit high quality Cu films. The novelty of the PIB source lies in the fact that the crucible and ionization parts are spaced in one cylindrical shell to make its structure compact and to get a uniform beam profile, but their electric circuits are not separated. In this article, we report the characteristics of the PIB source, such as voltage-ampere characteristics of the crucible and ionization parts, Cu+ ion beam uniformity with a change of the ionization currents, and deposition rate. (C) 1996 American Institute of Physics. English AMER INST PHYSICS CLUSTER BEAM FILMS DEPOSITION GROWTH Design and tests of the new partially ionized beam source Article 10.1063/1.1147578 1 REVIEW OF SCIENTIFIC INSTRUMENTS, v.67, no.12, pp.4114 - 4116 REVIEW OF SCIENTIFIC INSTRUMENTS 67 12 4114 4116 scie scopus A1996WA09100012 2-s2.0-0342407100 Instruments & Instrumentation Physics, Applied Instruments & Instrumentation Physics Article CLUSTER BEAM FILMS DEPOSITION GROWTH partially ionized beam (PIB) Compact & uniform beam profile