Kim, DS Ko, HS Kim, YM Rhee, SJ Hong, SC Yee, YH Yee, DS Woo, JC Choi, HJ Ihm, J Woo, DH Kang, KN 2024-01-21T19:11:20Z 2024-01-21T19:11:20Z 2022-01-11 1996-10-21 0003-6951 https://pubs.kist.re.kr/handle/201004/144264 A significant charge transfer, which differs from tunneling, over thick AlxGa1-xAs barrier in GaAs/AlxGa1-xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-Angstrom-thick Al0.3Ga0.7As barrier is universally ''leaky'' with transport time of similar to 300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible. (C) 1996 American Institute of Physics. English AMER INST PHYSICS SCANNING-TUNNELING-MICROSCOPY Thick AlxGa1-xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity Article 10.1063/1.117724 1 APPLIED PHYSICS LETTERS, v.69, no.17, pp.2513 - 2515 APPLIED PHYSICS LETTERS 69 17 2513 2515 scie scopus A1996VN89800021 2-s2.0-0040554513 Physics, Applied Physics Article SCANNING-TUNNELING-MICROSCOPY