Ko, CG Ju, BK Lee, YH Park, JH Oh, MH 2024-01-21T19:11:44Z 2024-01-21T19:11:44Z 2021-09-05 1996-10-01 0021-4922 https://pubs.kist.re.kr/handle/201004/144270 We fabricated diamond-like carbon (DLC) coated knife edge-shaped field emitter array (KEFEA) on the (110) silicon wafer. The fabricated KEFEA has more than six hundreds times of aspect ratio and about two times higher electric field at tip-apex compared with the pyramid-shaped edge field emitter array (FEA). A high quality DLC film which has similar properties to the diamond film was coated on the silicon KEFEA by PECVD method in order to improve the stability and electrical characteristics. The turn-on held was lowered from 0.18 MV/cm to 0.14 MV/cm by the DLC him coating to the pure silicon KEFEA. More than 400% of the short-term emitted current fluctuation was observed from the measurement of the pure silicon KEFEA; The DLC film coating on the pure silicon KEFEA reduced the emission current fluctuation to 15%. English JAPAN SOC APPLIED PHYSICS SILICON Fabrication and characterization of diamond-like carbon coated knife edge field emitter array Article 10.1143/JJAP.35.L1305 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.35, no.10A, pp.L1305 - L1307 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 35 10A L1305 L1307 scie scopus A1996VM31000022 2-s2.0-0030260354 Physics, Applied Physics Article SILICON DLC field emission KEFEA ODE stability