Park, HW Ju, BK Lee, YH Park, JH Oh, MH 2024-01-21T19:11:47Z 2024-01-21T19:11:47Z 2021-09-05 1996-10-01 0021-4922 https://pubs.kist.re.kr/handle/201004/144271 Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the reoxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35 V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies. English JAPAN SOC APPLIED PHYSICS SENSORS TIPS Emission characteristics of the molybdenum-coated silicon field emitter array Article 10.1143/JJAP.35.L1301 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.35, no.10A, pp.L1301 - L1304 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 35 10A L1301 L1304 scie scopus A1996VM31000021 2-s2.0-0030260603 Physics, Applied Physics Article SENSORS TIPS tip reactive ion etching sharpening current fluctuation Fowler-Nordheim