Kim, DS Ko, HS Kim, YM Rhee, SJ Hong, SC Yee, YH Kim, WS Woo, JC Choi, HJ Ihm, J Woo, DH Kang, KN 2024-01-21T19:12:39Z 2024-01-21T19:12:39Z 2022-01-10 1996-10 0038-1098 https://pubs.kist.re.kr/handle/201004/144286 Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Al0.3Ga0.7As alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions. Copyright (C) 1996 Published by Elsevier Science Ltd English PERGAMON-ELSEVIER SCIENCE LTD SCANNING-TUNNELING-MICROSCOPY LO PHONONS SUPERLATTICES GAAS EXCITONS DYNAMICS Anomalous real space charge transfer through thick barriers in GaAs/AlxGa1-x as a symmetric double quantum wells: AlxGa1-xAs as a percolating barrier Article 10.1016/0038-1098(96)00406-1 1 SOLID STATE COMMUNICATIONS, v.100, no.4, pp.231 - 235 SOLID STATE COMMUNICATIONS 100 4 231 235 scie scopus A1996VL20500006 2-s2.0-16144366389 Physics, Condensed Matter Physics Article SCANNING-TUNNELING-MICROSCOPY LO PHONONS SUPERLATTICES GAAS EXCITONS DYNAMICS nanostructures epitaxy electronic transport luminescence