Chung, HH Lee, JH Ju, BK Kim, YC Chung, KS 2024-01-21T19:12:50Z 2024-01-21T19:12:50Z 2021-09-05 1996-10 0374-4884 https://pubs.kist.re.kr/handle/201004/144289 A tungsten silicide film was deposited by low pressure chemical-vapor deposition (LPCVD) onto phosphorus (P)-doped polysilicon/SiO2/Si substrates. The tungsten polycide films were annealed in a nitrogen ambient at 850 degrees C for 20 min prior to oxidation. The kinetics of the thermal oxide growth of the annealed tungsten polycide (WSi2.5/P-doped polysilicon) films were studied function of the phosphorus doping level in the polysilicon and as a function of the excess silicon in the tungsten silicide. The activation energy for a linear rate constant (B/A) for tungsten polycide oxidation increased with increasing phosphorus doping in the polysilicon layer, while it was almost independent of the doping level for a parabolic rate constant (B). The excess Si from within the tungsten silicide (WSi2.5) film was consumed during the oxidation at first; then, the underlying polysilicon provided the necessary Si for further oxidation. The excess Si in the tungsten silicide enhanced the oxidation. English KOREAN PHYSICAL SOC THERMAL-OXIDATION POLYCRYSTALLINE SILICON INTERCONNECTIONS SILICIDES KINETICS LAYERS OXIDE Effects of the phosphorus doping level and excess silicon on the oxidation of tungsten polycide Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.29, no.5, pp.658 - 663 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 29 5 658 663 scie scopus A1996VM66300019 2-s2.0-18844440986 Physics, Multidisciplinary Physics Article THERMAL-OXIDATION POLYCRYSTALLINE SILICON INTERCONNECTIONS SILICIDES KINETICS LAYERS OXIDE tugnsten polycide phosphorus doping